Fotodiodi - Fototransistor

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Bit Rate (bps)	Caratteristiche	Package	Sensibilità Ottica (dBm), Typ.	Tipologia	Dark current Tipica	Sensitive Area (µmɸ)	Half Angle (deg)	Peak sens. wavelenght (nm)	Responsività (mA/W) @λ(nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Photo Current Vce = 5 V
Discontinued Confronta	KPGX1G Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 1.25G	Caratteristiche GaAs PD-TIA	Package Hermetic sealed, Pigtail, LC-ROSA	Sensibilità Ottica (dBm), Typ. -24 @ 3.3V	Tipologia GaAs PD-TIA Receivers
Discontinued Confronta	KPGX2GK Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 2.5G	Caratteristiche GaAs PD-TIA	Package Hermetic sealed, Pigtail, LC-ROSA	Sensibilità Ottica (dBm), Typ. -20 @ 3.3V	Tipologia GaAs PD-TIA Receivers
Discontinued Confronta	KPGX4G Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 4.25G	Caratteristiche GaAs PD-TIA	Package Hermetic sealed, Pigtail, LC-ROSA	Sensibilità Ottica (dBm), Typ. -17 @ 3.3V	Tipologia GaAs PD-TIA Receivers
Discontinued Confronta	KPID020D Kyosemi, Optical Communication Devices, Si PIN Photodiodes, Fotodiodo alta velocità		Caratteristiche Si high speed	Package Hermetic sealed		Tipologia Si PIN Photodiodes	Dark current Tipica 10pA @ 3V	Sensitive Area (µmɸ) 200
Discontinued Confronta	KPID050D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal		Tipologia High Speed Silicon Photodiodes		Sensitive Area (µmɸ) 500	Half Angle (deg) -	Peak sens. wavelenght (nm) 700	Responsività (mA/W) @λ(nm) 350 @ 850
Discontinued Confronta	KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, Fotodiodo alta velocità		Caratteristiche Si high speed	Package Hermetic sealed		Tipologia Si PIN Photodiodes	Dark current Tipica 40pA @ 3V	Sensitive Area (µmɸ) 500
Discontinued Confronta	KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 ceramic, epoxy lens		Tipologia Silicon Photodiodes			Half Angle (deg) 145	Peak sens. wavelenght (nm) 900		Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 12	Short circuit current (lx) 1000
Discontinued Confronta	KPS1042 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi			Package Surface mount		Tipologia Silicon Photodiode Array & Position sensing detector (PSD)			Half Angle (deg) -	Peak sens. wavelenght (nm) 890	Responsività (mA/W) @λ(nm) 460 @ 850	Sensitive Area (mm) 1.0 x 4.2 (per 1ch)
Discontinued Confronta	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Phototransistors			Half Angle (deg) 90	Peak sens. wavelenght (nm) 800		Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)
Discontinued Confronta	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 ceramic, epoxy lens		Tipologia Silicon Phototransistors			Half Angle (deg) 120	Peak sens. wavelenght (nm) 800		Sensitive Area (mm) 0.64 x 0.64			Photo Current Vce = 5 V 4 (mA) 1000 (lx)