Fotodiodi - Fototransistor

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Bit Rate (bps)	Caratteristiche	Package	Sensibilità Ottica (dBm), Typ.	Tipologia	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Dark current Tipica	Sensitive Area (µmɸ)	Photo Current Vce = 5 V	Montaggio	Output	Output Mode	Paeak	Serie	Tipo di uscita
Confronta	KPGX4G-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 4G	Caratteristiche GaAs PD-TIA	Package LC-ROSA	Sensibilità Ottica (dBm), Typ. -17 @ 3.3V	Tipologia GaAs PD-TIA Receivers
Confronta	KPID1301H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal		Tipologia Silicon Photodiodes	Half Angle (deg) 28	Peak sens. wavelenght (nm) 900	Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 60	Short circuit current (lx) 1000
Confronta	KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode		Caratteristiche Si high speed	Package Chip		Tipologia Si PIN Photodiodes						Dark current Tipica 0.8nA @ 10V	Sensitive Area (µmɸ) 1500
Confronta	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold		Tipologia Silicon Phototransistors	Half Angle (deg) 60	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64					Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Confronta	KD1299 Modello KD1299 silicon photodiode TO-18 con rivestimento in resina epossidica.														Montaggio TO-18 Stem & Window	Output Photo Diode	Output Mode Livello logico alto	Paeak 900nm	Serie Serie KD	Tipo di uscita Pull-up
Discontinued Confronta	KD1366 Modello KD1366 silicon photodiode in SMD.														Montaggio SMD	Output Photo Diode	Output Mode Livello logico alto	Paeak 900nm	Serie Serie KD	Tipo di uscita Pull-up
Discontinued Confronta	KPD101T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package Surface mount		Tipologia Silicon Photodiodes	Half Angle (deg) 140	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 6	Short circuit current (lx) 1000
Discontinued Confronta	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 ceramic, epoxy lens		Tipologia Silicon Photodiodes	Half Angle (deg) 145	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12	Short circuit current (lx) 1000
Discontinued Confronta	KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package Surface mount		Tipologia Silicon Photodiodes	Half Angle (deg) 140	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 15	Short circuit current (lx) 1000
Discontinued Confronta	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ 6,5 ceramic, epoxy lens		Tipologia Silicon Photodiodes	Half Angle (deg) 120	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70	Short circuit current (lx) 1000