Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
Prodotto | Descrizione | Caratteristiche | Dark current Tipica | Package | Sensitive Area (µmɸ) | Tipologia | Responsività (mA/W) @λ(nm) | Sensitive Wavelenght (nm) | Half Angle (deg) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Bit Rate (bps) | Sensibilità Ottica (dBm), Typ. |
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Discontinued
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KPDEH16C OPtical Communication Devices, InGaAs Photodiodes, Fotodiodo 25GHz |
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
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Discontinued
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KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 25GHz |
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
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Discontinued
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KPDEH16DLC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
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Discontinued
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KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Caratteristiche
High speed
|
Dark current Tipica
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Tipologia
InGaAs Photodiodes
|
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Discontinued
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KPDF030F24-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
1.1 @ 2200
|
Sensitive Wavelenght (nm)
1200 - 2500
|
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Discontinued
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KPDG006HAn Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo alta velocità |
Caratteristiche
Flip-Chip
|
Dark current Tipica
30pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
60
|
Tipologia
GaAs Photodiodes
|
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Discontinued
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KPDG008 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo |
Caratteristiche
GaAs PD
|
Dark current Tipica
30pA @ 5V
|
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
80
|
Tipologia
GaAs Photodiodes
|
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Discontinued
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KPDG020 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs Fotodiodo alta velocità |
Caratteristiche
Surface illuminated
|
Dark current Tipica
2.5pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
200
|
Tipologia
GaAs Photodiodes
|
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Discontinued
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KPDS100-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-5, hermetic seal, TE cooler
|
Tipologia
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Responsività (mA/W) @λ(nm)
1200 @ 3300
|
Half Angle (deg)
-
|
Peak sens. wavelenght (nm)
3300
|
Sensitive Area (mm)
1.00 x 1.00
|
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Discontinued
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KPDX10G Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 10Gbps PIN-TIA Receiver |
Caratteristiche
Preamplified receivers
|
Package
Hermetic sealed, Pigtail
|
Tipologia
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
10G
|
Sensibilità Ottica (dBm), Typ.
-18 @ 3.3V
|