Photodiodes - Phototransistors

Photodiodes - Phototransistors

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Product	Description	Bit Rate (bps)	Characteristics	Package	Typology	Half Angle (deg)	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Typical Dark Current	Sensitive Area (µmɸ)	Photo Current Vce = 5 V	Mounting	Output	Output Mode	Series	Output type
Add to comparison	KPGX4G-LR33S Kyosemi, Optical Communication Devices, 2.5Gbps and 4Gbps GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 4G	Characteristics GaAs PD-TIA	Package LC-PINK	Typology GaAs PD-TIA Receivers
Add to comparison	KPID1301H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal	Typology Silicon Photodiodes	Half Angle (deg) 28	Peak sens. wavelenght (nm) 900	Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 60
Add to comparison	KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode		Characteristics Si high speed	Package Chip	Typology Si PIN Photodiodes					Typical Dark Current 0.8nA @ 10V	Sensitive Area (µmɸ) 1500
Add to comparison	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold	Typology Silicon Phototransistors	Half Angle (deg) 60	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64				Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Add to comparison	KD1299 Model KD1299 is silicon photodiode mounted in TO-18 type header with epoxy encapsulation.						Peak sens. wavelenght (nm) 900nm						Mounting TO-18 Stem & Window	Output Photo Diode	Output Mode Livello logico alto	Series KD Series	Output type Pull-up
Discontinued Add to comparison	KD1366 Model KD1366 is silicon photodiode mounted in Surface mount package						Peak sens. wavelenght (nm) 900nm						Mounting SMD	Output Photo Diode	Output Mode Livello logico alto	Series KD Series	Output type Pull-up
Discontinued Add to comparison	KPD101T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package Surface mount	Typology Silicon Photodiodes	Half Angle (deg) 140	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 6
Discontinued Add to comparison	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 ceramic, epoxy lens	Typology Silicon Photodiodes	Half Angle (deg) 145	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12
Discontinued Add to comparison	KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package Surface mount	Typology Silicon Photodiodes	Half Angle (deg) 140	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 15
Discontinued Add to comparison	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ 6,5 ceramic, epoxy lens	Typology Silicon Photodiodes	Half Angle (deg) 120	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70