Photodiodes - Phototransistors
| Product | Description | Mounting | Output | Output Mode | Peak sens. wavelenght (nm) | Series | Output type | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Typology | Short circuit current (µA) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Gap | Characteristics | Typical Dark Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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KD834 Model KD834 is silicon photodiode mounted in TO-18 type header with lens can. |
Mounting
TO-18 Stem & Lens can
|
Output
Photo Diode
|
Output Mode
Livello logico alto
|
Peak sens. wavelenght (nm)
900nm
|
Series
KD Series
|
Output type
Pull-up
|
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KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Peak sens. wavelenght (nm)
900
|
Package
Surface mount
|
Responsivity (mA/W) @λ(nm)
540 @ 850
|
Sensitive Area (mm)
0.74 x 2.0 (per 1ch)
|
Typology
Silicon Photodiode Array & Position sensing detector (PSD)
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KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Peak sens. wavelenght (nm)
950
|
Package
Surface mount
|
Sensitive Area (mm)
2.80 x 0.80
|
Typology
Silicon Photodiodes
|
Short circuit current (µA)
22
|
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KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Peak sens. wavelenght (nm)
950
|
Package
Surface mount
|
Responsivity (mA/W) @λ(nm)
16(µA) @ 1000 lx
|
Sensitive Area (mm)
1.5 x 1.0 (per 1ch)
|
Typology
Silicon Photodiode Array & Position sensing detector (PSD)
|
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KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Peak sens. wavelenght (nm)
1600
|
Package
TO-46, hermetic seal, TE cooler
|
Responsivity (mA/W) @λ(nm)
1000 @ 1550
|
Sensitive Area (mm)
0.86 x 0.86
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
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KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Typology
InGaAs NIR Photodiodes
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
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KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Peak sens. wavelenght (nm)
700
|
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
Typology
High Speed Silicon Photodiodes
|
Sensitive Area (µmɸ)
200
|
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KS853 Model KS853 is NPN type of silicon photo transistor in TO-18 type header with epoxy encapsulation. |
Mounting
TO-18 Stem & Lens can
|
Output
Photo Transistor
|
Output Mode
Digital high level
|
Series
KS Series
|
Output type
Pull-up
|
Gap
10mm
|
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KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
4ch array with 250µm pitch
|
Typology
InGaAs Photodiodes
|
Sensitive Area (µmɸ)
80
|
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
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KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
8ch array with 250µm pitch
|
Typology
InGaAs Photodiodes
|
Sensitive Area (µmɸ)
80
|
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
| Product |
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| Product | Description | Mounting | Output | Output Mode | Peak sens. wavelenght (nm) | Series | Output type | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Typology | Short circuit current (µA) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Gap | Characteristics | Typical Dark Current |
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| Product |
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| Product | Description | Mounting | Output | Output Mode | Peak sens. wavelenght (nm) | Series | Output type | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (mm) | Typology | Short circuit current (µA) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Gap | Characteristics | Typical Dark Current |
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