Photodiodes - Phototransistors

Photodiodes - Phototransistors

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Product	Description	Mounting	Output	Output Mode	Peak sens. wavelenght (nm)	Series	Output type	Package	Responsivity (mA/W) @λ(nm)	Sensitive Area (mm)	Typology	Short circuit current (µA)	Sensitive Area (µmɸ)	Sensitive Wavelenght (nm)	Gap	Characteristics	Typical Dark Current
Add to comparison	KD834 Model KD834 is silicon photodiode mounted in TO-18 type header with lens can.	Mounting TO-18 Stem & Lens can	Output Photo Diode	Output Mode Livello logico alto	Peak sens. wavelenght (nm) 900nm	Series KD Series	Output type Pull-up
Add to comparison	KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi				Peak sens. wavelenght (nm) 900			Package Surface mount	Responsivity (mA/W) @λ(nm) 540 @ 850	Sensitive Area (mm) 0.74 x 2.0 (per 1ch)	Typology Silicon Photodiode Array & Position sensing detector (PSD)
Add to comparison	KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi				Peak sens. wavelenght (nm) 950			Package Surface mount		Sensitive Area (mm) 2.80 x 0.80	Typology Silicon Photodiodes	Short circuit current (µA) 22
Add to comparison	KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi				Peak sens. wavelenght (nm) 950			Package Surface mount	Responsivity (mA/W) @λ(nm) 16(µA) @ 1000 lx	Sensitive Area (mm) 1.5 x 1.0 (per 1ch)	Typology Silicon Photodiode Array & Position sensing detector (PSD)
Add to comparison	KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi				Peak sens. wavelenght (nm) 1600			Package TO-46, hermetic seal, TE cooler	Responsivity (mA/W) @λ(nm) 1000 @ 1550	Sensitive Area (mm) 0.86 x 0.86	Typology Thermoelectrically Cooled InGaAs-InAs Photodiodes
Add to comparison	KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi							Package TO-18, hermetic seal	Responsivity (mA/W) @λ(nm) 1.0 @ 1550		Typology InGaAs NIR Photodiodes		Sensitive Area (µmɸ) 1500	Sensitive Wavelenght (nm) 900 - 1700
Add to comparison	KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi				Peak sens. wavelenght (nm) 700			Package TO-18, hermetic seal	Responsivity (mA/W) @λ(nm) 350 @ 850		Typology High Speed Silicon Photodiodes		Sensitive Area (µmɸ) 200
Add to comparison	KS853 Model KS853 is NPN type of silicon photo transistor in TO-18 type header with epoxy encapsulation.	Mounting TO-18 Stem & Lens can	Output Photo Transistor	Output Mode Digital high level		Series KS Series	Output type Pull-up								Gap 10mm
Add to comparison	KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode							Package 4ch array with 250µm pitch			Typology InGaAs Photodiodes		Sensitive Area (µmɸ) 80			Characteristics Array	Typical Dark Current 80pA @ 5V
Add to comparison	KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode							Package 8ch array with 250µm pitch			Typology InGaAs Photodiodes		Sensitive Area (µmɸ) 80			Characteristics Array	Typical Dark Current 80pA @ 5V