Photodiodes - Phototransistors

Photodiodes - Phototransistors

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Product	Description	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Typology	Amplification factor	Responsivity (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Characteristics	Typical Dark Current
Add to comparison	KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 34	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 70	Typology Silicon Photodiodes
Add to comparison	KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 95	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 17	Typology Silicon Photodiodes
Add to comparison	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Typology Silicon Photodiodes
Add to comparison	KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 150	Package Side view, plastic mold	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 78	Typology Silicon Photodiodes
Add to comparison	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package Surface mount	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68	Typology Silicon Photodiodes
Add to comparison	KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780			Typology Silicon Avalanche Photodiodes	Amplification factor 150	Responsivity (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 200
Add to comparison	KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780			Typology Silicon Avalanche Photodiodes	Amplification factor 150	Responsivity (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 500
Add to comparison	KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780			Typology Silicon Avalanche Photodiodes	Amplification factor 150	Responsivity (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 1000
Add to comparison	KPDE004 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Low Dark Current High Speed Photodiode		Package Hermetic sealed, Pigtail				Typology InGaAs Photodiodes			Sensitive Area (µmɸ) 45	Characteristics High speed	Typical Dark Current 20pA @ 5V
Add to comparison	KPDE006 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Low Dark Current High Speed Photodiode		Package Hermetic sealed, Pigtail				Typology InGaAs Photodiodes			Sensitive Area (µmɸ) 60	Characteristics High speed	Typical Dark Current 30pA @ 2V