Photodiodes - Phototransistors

Photodiodes - Phototransistors

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Product	Description	Bit Rate (bps)	Characteristics	Package	Typology	Typical Dark Current	Sensitive Area (µmɸ)	Peak sens. wavelenght (nm)	Responsivity (mA/W) @λ(nm)	Half Angle (deg)	Sensitive Area (mm)	Short circuit current (µA)	Photo Current Vce = 5 V
Discontinued Add to comparison	KPGX1G Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 1.25G	Characteristics GaAs PD-TIA	Package Hermetic sealed, Pigtail, LC-ROSA	Typology GaAs PD-TIA Receivers
Discontinued Add to comparison	KPGX2GK Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 2.5G	Characteristics GaAs PD-TIA	Package Hermetic sealed, Pigtail, LC-ROSA	Typology GaAs PD-TIA Receivers
Discontinued Add to comparison	KPGX4G Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel	Bit Rate (bps) 4.25G	Characteristics GaAs PD-TIA	Package Hermetic sealed, Pigtail, LC-ROSA	Typology GaAs PD-TIA Receivers
Discontinued Add to comparison	KPID020D Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode		Characteristics Si high speed	Package Hermetic sealed	Typology Si PIN Photodiodes	Typical Dark Current 10pA @ 3V	Sensitive Area (µmɸ) 200
Discontinued Add to comparison	KPID050D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi			Package TO-18, hermetic seal	Typology High Speed Silicon Photodiodes		Sensitive Area (µmɸ) 500	Peak sens. wavelenght (nm) 700	Responsivity (mA/W) @λ(nm) 350 @ 850
Discontinued Add to comparison	KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode		Characteristics Si high speed	Package Hermetic sealed	Typology Si PIN Photodiodes	Typical Dark Current 40pA @ 3V	Sensitive Area (µmɸ) 500
Discontinued Add to comparison	KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi			Package ϕ3 ceramic, epoxy lens	Typology Silicon Photodiodes			Peak sens. wavelenght (nm) 900		Half Angle (deg) 145	Sensitive Area (mm) 1.10 x 1.10	Short circuit current (µA) 12
Discontinued Add to comparison	KPS1042 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi			Package Surface mount	Typology Silicon Photodiode Array & Position sensing detector (PSD)			Peak sens. wavelenght (nm) 890	Responsivity (mA/W) @λ(nm) 460 @ 850		Sensitive Area (mm) 1.0 x 4.2 (per 1ch)
Discontinued Add to comparison	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 plastic mold	Typology Silicon Phototransistors			Peak sens. wavelenght (nm) 800		Half Angle (deg) 90	Sensitive Area (mm) 0.64 x 0.64		Photo Current Vce = 5 V 4 (mA) 1000 (lx)
Discontinued Add to comparison	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi			Package ϕ3 ceramic, epoxy lens	Typology Silicon Phototransistors			Peak sens. wavelenght (nm) 800		Half Angle (deg) 120	Sensitive Area (mm) 0.64 x 0.64		Photo Current Vce = 5 V 4 (mA) 1000 (lx)