KPT081M31

KPT081M31

Product code

KPT081M31

Manufacturer

Kyosemi Corporation

Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi

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Features:

• NPN photransistor
• Transparent epoxy mold
• Low leak current

Applications:

• Optical switches
• Optical encoders
• Photo-isolator
• Cameras stroboscopes
• Infrared sensors
• Automatic control apparatus

Half Angle (deg)

60

Package

ϕ3 plastic mold

Peak sens. wavelenght (nm)

800

Photo Current Vce = 5 V

7 (mA) 1000 (lx)

Sensitive Area (mm)

0.64 x 0.64

Typology

Silicon Phototransistors

Scheda tecnica111.92 KB

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