Fotodiodi - Fototransistor

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)	Tipologia	Fattore di Amplicazione	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Caratteristiche	Dark current Tipica
Confronta	KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 34	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 70	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Confronta	KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 95	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 17	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Confronta	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Confronta	KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 150	Package Side view, plastic mold	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 78	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Confronta	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package Surface mount	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68	Short circuit current (lx) 1000	Tipologia Silicon Photodiodes
Confronta	KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 200
Confronta	KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 500
Confronta	KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 780				Tipologia Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Responsività (mA/W) @λ(nm) 450 @ 850	Sensitive Area (µmɸ) 1000
Confronta	KPDE004 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed		Package Hermetic sealed, Pigtail					Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 45	Caratteristiche High speed	Dark current Tipica 20pA @ 5V
Confronta	KPDE006 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Low Dark Current High Speed		Package Hermetic sealed, Pigtail					Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 60	Caratteristiche High speed	Dark current Tipica 30pA @ 2V