Fotodiodi - Fototransistor

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Montaggio	Output	Output Mode	Paeak	Serie	Tipo di uscita	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Responsività (mA/W) @λ(nm)	Sensitive Area (mm)	Tipologia	Short circuit current (µA)	Short circuit current (lx)	Sensitive Area (µmɸ)	Sensitive Wavelenght (nm)	Gap	Caratteristiche	Dark current Tipica
Confronta	KD834 Modello KD834 silicon photodiode TO-18 con lens can.	Montaggio TO-18 Stem & Lens can	Output Photo Diode	Output Mode Livello logico alto	Paeak 900nm	Serie Serie KD	Tipo di uscita Pull-up
Confronta	KDA16S Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi							Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 900	Responsività (mA/W) @λ(nm) 540 @ 850	Sensitive Area (mm) 0.74 x 2.0 (per 1ch)	Tipologia Silicon Photodiode Array & Position sensing detector (PSD)
Confronta	KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi							Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 950		Sensitive Area (mm) 2.80 x 0.80	Tipologia Silicon Photodiodes	Short circuit current (µA) 22	Short circuit current (lx) 1000
Confronta	KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi							Half Angle (deg) -	Package Surface mount	Peak sens. wavelenght (nm) 950	Responsività (mA/W) @λ(nm) 16(µA) @ 1000 lx	Sensitive Area (mm) 1.5 x 1.0 (per 1ch)	Tipologia Silicon Photodiode Array & Position sensing detector (PSD)
Confronta	KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi							Half Angle (deg) -	Package TO-46, hermetic seal, TE cooler	Peak sens. wavelenght (nm) 1600	Responsività (mA/W) @λ(nm) 1000 @ 1550	Sensitive Area (mm) 0.86 x 0.86	Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes
Confronta	KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi								Package TO-18, hermetic seal		Responsività (mA/W) @λ(nm) 1.0 @ 1550		Tipologia InGaAs NIR Photodiodes			Sensitive Area (µmɸ) 1500	Sensitive Wavelenght (nm) 900 - 1700
Confronta	KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi							Half Angle (deg) -	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 700	Responsività (mA/W) @λ(nm) 350 @ 850		Tipologia High Speed Silicon Photodiodes			Sensitive Area (µmɸ) 200
Confronta	KS853 Modello KS853 NPN silicon photo transistor in TO-18 type header con rivestimento in resina epossidica.	Montaggio TO-18 Stem & Lens can	Output Photo Transistor	Output Mode Livello logico alto		Serie Serie KS	Tipo di uscita Pull-up											Gap 10mm
Confronta	KPA4-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità								Package 4ch array with 250µm pitch				Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 80			Caratteristiche Array	Dark current Tipica 80pA @ 5V
Confronta	KPA8-2N Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità								Package 8ch array with 250µm pitch				Tipologia InGaAs Photodiodes			Sensitive Area (µmɸ) 80			Caratteristiche Array	Dark current Tipica 80pA @ 5V