Fotodiodi - Fototransistor

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Fattore di Amplicazione	Package	Peak sens. wavelenght (nm)	Responsività (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Tipologia	Caratteristiche	Dark current Tipica	Sensitive Wavelenght (nm)	Half Angle (deg)	Sensitive Area (mm)
Discontinued Confronta	KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670	Responsività (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 200	Tipologia Silicon Avalanche Photodiodes
Discontinued Confronta	KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670	Responsività (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 500	Tipologia Silicon Avalanche Photodiodes
Discontinued Confronta	KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Fotodiodi Effetto Valanga, Silicon Avalanche Photodiodes	Fattore di Amplicazione 150	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670	Responsività (mA/W) @λ(nm) 350 @ 660	Sensitive Area (µmɸ) 1000	Tipologia Silicon Avalanche Photodiodes
Discontinued Confronta	KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità		Package Chip			Sensitive Area (µmɸ) 50	Tipologia InGaAs Photodiodes	Caratteristiche Array	Dark current Tipica 30pA @ 5V
Discontinued Confronta	KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail		Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 300	Tipologia InGaAs NIR Photodiodes			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità		Package Hermetic sealed			Sensitive Area (µmɸ) 300	Tipologia InGaAs Photodiodes	Caratteristiche L-band	Dark current Tipica 100pA @ 5V
Discontinued Confronta	KPDE086S Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail		Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 860x860	Tipologia InGaAs NIR Photodiodes			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE10GC-V3 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 10 Gbps		Package Filp-chip type Chip on carrier			Sensitive Area (µmɸ) 45	Tipologia InGaAs Photodiodes	Caratteristiche High speed	Dark current Tipica 10pA @ 5V
Discontinued Confronta	KPDE300 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package TO-5, hermetic seal		Responsività (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 3000	Tipologia InGaAs NIR Photodiodes			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Confronta	KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi		Package TO-5, hermetic seal, TE cooler	Peak sens. wavelenght (nm) 1600	Responsività (mA/W) @λ(nm) 1000 @ 1550		Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes				Half Angle (deg) -	Sensitive Area (mm) 0.86 x 0.86