Photodiodes - Phototransistors

Photodiodes - Phototransistors

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Product	Description	Amplification factor	Package	Peak sens. wavelenght (nm)	Responsivity (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Typology	Characteristics	Typical Dark Current	Sensitive Wavelenght (nm)	Sensitive Area (mm)
Discontinued Add to comparison	KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes	Amplification factor 150	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670	Responsivity (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 200	Typology Silicon Avalanche Photodiodes
Discontinued Add to comparison	KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes	Amplification factor 150	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670	Responsivity (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 500	Typology Silicon Avalanche Photodiodes
Discontinued Add to comparison	KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes	Amplification factor 150	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670	Responsivity (mA/W) @λ(nm) 350 @ 660	Sensitive Area (µmɸ) 1000	Typology Silicon Avalanche Photodiodes
Discontinued Add to comparison	KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode		Package Chip			Sensitive Area (µmɸ) 50	Typology InGaAs Photodiodes	Characteristics Array	Typical Dark Current 30pA @ 5V
Discontinued Add to comparison	KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail		Responsivity (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 300	Typology InGaAs NIR Photodiodes			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Add to comparison	KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode		Package Hermetic sealed			Sensitive Area (µmɸ) 300	Typology InGaAs Photodiodes	Characteristics L-band	Typical Dark Current 100pA @ 5V
Discontinued Add to comparison	KPDE086S Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail		Responsivity (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 860x860	Typology InGaAs NIR Photodiodes			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Add to comparison	KPDE10GC-V3 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode		Package Filp-chip type Chip on carrier			Sensitive Area (µmɸ) 45	Typology InGaAs Photodiodes	Characteristics High speed	Typical Dark Current 10pA @ 5V
Discontinued Add to comparison	KPDE300 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package TO-5, hermetic seal		Responsivity (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 3000	Typology InGaAs NIR Photodiodes			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Add to comparison	KPDE86S-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi		Package TO-5, hermetic seal, TE cooler	Peak sens. wavelenght (nm) 1600	Responsivity (mA/W) @λ(nm) 1000 @ 1550		Typology Thermoelectrically Cooled InGaAs-InAs Photodiodes				Sensitive Area (mm) 0.86 x 0.86