Photodiodes - Phototransistors
Photodiodes - Phototransistors
Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Wavelenght (nm) | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Bit Rate (bps) |
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Discontinued
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KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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Discontinued
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KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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Discontinued
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KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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Discontinued
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KPDEH16DLC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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Discontinued
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KPDF030F24-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
1.1 @ 2200
|
Sensitive Wavelenght (nm)
1200 - 2500
|
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Discontinued
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KPDG006HAn Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode high speed |
Characteristics
Flip-Chip
|
Typical Dark Current
30pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
60
|
Typology
GaAs Photodiodes
|
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Discontinued
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KPDG008 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode |
Characteristics
GaAs PD
|
Typical Dark Current
30pA @ 5V
|
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
80
|
Typology
GaAs Photodiodes
|
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Discontinued
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KPDG020 Kyosemi, Optical Communication Devices, GaAs Photodiodes, GaAs photodiode |
Characteristics
Surface illuminated
|
Typical Dark Current
2.5pA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
200
|
Typology
GaAs Photodiodes
|
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Discontinued
|
KPDS100-H54P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-5, hermetic seal, TE cooler
|
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
|
Responsivity (mA/W) @λ(nm)
1200 @ 3300
|
Peak sens. wavelenght (nm)
3300
|
Sensitive Area (mm)
1.00 x 1.00
|
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Discontinued
|
KPDX10G Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 10Gbps PIN-TIA Receiver |
Characteristics
Preamplified receivers
|
Package
Hermetic sealed, Pigtail
|
Typology
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
10G
|