Sensori optoelettronici
Sensori optoelettronici
Prodotto | Descrizione | Bit Rate (bps) | Caratteristiche | Package | Sensibilità Ottica (dBm), Typ. | Tipologia | Dark current Tipica | Sensitive Area (µmɸ) | Half Angle (deg) | Peak sens. wavelenght (nm) | Responsività (mA/W) @λ(nm) | Sensitive Area (mm) | Short circuit current (µA) | Short circuit current (lx) | Photo Current Vce = 5 V |
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Discontinued
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KPGX1G Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Bit Rate (bps)
1.25G
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Caratteristiche
GaAs PD-TIA
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Package
Hermetic sealed, Pigtail, LC-ROSA
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Sensibilità Ottica (dBm), Typ.
-24 @ 3.3V
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Tipologia
GaAs PD-TIA Receivers
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Discontinued
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KPGX2GK Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Bit Rate (bps)
2.5G
|
Caratteristiche
GaAs PD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-20 @ 3.3V
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Tipologia
GaAs PD-TIA Receivers
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Discontinued
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KPGX4G Kyosemi, Optical Communication Devices, GaAs PD-TIA Receivers for 850nm Gigabit Ethernet and Fiber Channel |
Bit Rate (bps)
4.25G
|
Caratteristiche
GaAs PD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Sensibilità Ottica (dBm), Typ.
-17 @ 3.3V
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Tipologia
GaAs PD-TIA Receivers
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Discontinued
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KPID020D Kyosemi, Optical Communication Devices, Si PIN Photodiodes, Fotodiodo alta velocità |
Caratteristiche
Si high speed
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Package
Hermetic sealed
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Tipologia
Si PIN Photodiodes
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Dark current Tipica
10pA @ 3V
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Sensitive Area (µmɸ)
200
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Discontinued
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KPID050D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
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Tipologia
High Speed Silicon Photodiodes
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Sensitive Area (µmɸ)
500
|
Half Angle (deg)
-
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Peak sens. wavelenght (nm)
700
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Responsività (mA/W) @λ(nm)
350 @ 850
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Discontinued
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KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, Fotodiodo alta velocità |
Caratteristiche
Si high speed
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Package
Hermetic sealed
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Tipologia
Si PIN Photodiodes
|
Dark current Tipica
40pA @ 3V
|
Sensitive Area (µmɸ)
500
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Discontinued
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KPID1301C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
ϕ3 ceramic, epoxy lens
|
Tipologia
Silicon Photodiodes
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Half Angle (deg)
145
|
Peak sens. wavelenght (nm)
900
|
Sensitive Area (mm)
1.10 x 1.10
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Short circuit current (µA)
12
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Short circuit current (lx)
1000
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Discontinued
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KPS1042 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Package
Surface mount
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Tipologia
Silicon Photodiode Array & Position sensing detector (PSD)
|
Half Angle (deg)
-
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Peak sens. wavelenght (nm)
890
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Responsività (mA/W) @λ(nm)
460 @ 850
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Sensitive Area (mm)
1.0 x 4.2 (per 1ch)
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Discontinued
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KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Package
ϕ3 plastic mold
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Tipologia
Silicon Phototransistors
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Half Angle (deg)
90
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Peak sens. wavelenght (nm)
800
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Sensitive Area (mm)
0.64 x 0.64
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Photo Current Vce = 5 V
4 (mA) 1000 (lx)
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Discontinued
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KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Package
ϕ3 ceramic, epoxy lens
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Tipologia
Silicon Phototransistors
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Half Angle (deg)
120
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Peak sens. wavelenght (nm)
800
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Sensitive Area (mm)
0.64 x 0.64
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Photo Current Vce = 5 V
4 (mA) 1000 (lx)
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