Fotodiodi - Fototransistor
Fotodiodi - Fototransistor
Prodotto | Descrizione | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Photo Current Vce = 5 V | Sensitive Area (mm) | Tipologia | Montaggio | Output | Output Mode | Paeak | Serie | Tipo di uscita |
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Discontinued
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KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Tipologia
Silicon Phototransistors
|
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Discontinued
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KPT801HB Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
3 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Tipologia
Silicon Phototransistors
|
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Discontinued
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KPT811H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi |
Half Angle (deg)
17
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
800
|
Photo Current Vce = 5 V
2 (mA) 100 (lx)
|
Sensitive Area (mm)
0.64 x 0.64
|
Tipologia
Silicon Phototransistors
|
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Discontinued
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KS1364 Modello KS1364 NPN silicon photo transistor in SMD. |
Montaggio
SMD
|
Output
Photo Transistor
|
Output Mode
Livello logico alto
|
Paeak
900nm
|
Serie
Serie KS
|
Tipo di uscita
Pull-up
|