Fotodiodi - Fototransistor

Fotodiodi - Fototransistor

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Prodotto	Descrizione	Tipologia	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Short circuit current (lx)
Confronta	KPC8-T Photodevices for Sensors - Detectors, InGaAs Photovolotaic Power Converter, Kyosemi	Tipologia Thermoelectrically Cooled InGaAs-InAs Photodiodes
Confronta	KPD101M31 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 60	Package ϕ3 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 30	Short circuit current (lx) 1000
Rimuovi	KPD101M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 90	Package ϕ3 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 16	Short circuit current (lx) 1000
Confronta	KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 76	Package ϕ5 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 19	Short circuit current (lx) 1000
Confronta	KPD104M32 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 70	Package ϕ3 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 10	Short circuit current (lx) 1000
Confronta	KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 40	Package ϕ5 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 55	Short circuit current (lx) 1000
Confronta	KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 23	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 60	Short circuit current (lx) 1000
Confronta	KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 100	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 8	Short circuit current (lx) 1000
Confronta	KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 140	Package TO-18, epoxy lens	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 11	Short circuit current (lx) 1000
Confronta	KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Tipologia Silicon Photodiodes	Half Angle (deg) 130	Package ϕ5 plastic mold	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 16	Short circuit current (lx) 1000