Sensori optoelettronici
Sensori optoelettronici
Prodotto | Descrizione | Caratteristiche | Dark current Tipica | Package | Sensitive Area (µmɸ) | Tipologia | Responsività (mA/W) @λ(nm) | Sensitive Wavelenght (nm) |
---|---|---|---|---|---|---|---|---|
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs Fotodiodo |
Caratteristiche
Mini can
|
Dark current Tipica
160pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
80
|
Tipologia
InGaAs Photodiodes
|
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|
KPDE008S-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Mini Can InGaAs PD Pigtail |
Caratteristiche
Mini can pigtail
|
Dark current Tipica
30pA @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
80
|
Tipologia
InGaAs Photodiodes
|
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|
KPDE020 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Caratteristiche
High speed
|
Dark current Tipica
50pA @ 5V
|
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
200
|
Tipologia
InGaAs Photodiodes
|
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|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs Fotodiodo |
Caratteristiche
Mini can
|
Dark current Tipica
400pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
200
|
Tipologia
InGaAs Photodiodes
|
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|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs Fotodiodo |
Caratteristiche
Mini can
|
Dark current Tipica
600pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs Photodiodes
|
||
|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs NIR Photodiodes
|
Responsività (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Wavelenght (nm)
900 - 1700
|
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KPDE030SA-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo Alta sensibilità |
Caratteristiche
Mini can pigtail
|
Dark current Tipica
600pA (max) @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
300
|
Tipologia
InGaAs Photodiodes
|
||
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Fotodiodo 10 Gbps |
Caratteristiche
High speed
|
Dark current Tipica
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Tipologia
InGaAs Photodiodes
|
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|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, Fotodiodo Effetto Valanga |
Caratteristiche
APD
|
Dark current Tipica
10nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
55
|
Tipologia
InGaAs Avalanche Photodiodes
|
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|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, Fotodiodo Effetto Valanga |
Caratteristiche
APD
|
Dark current Tipica
15nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
75
|
Tipologia
InGaAs Avalanche Photodiodes
|