Optoelectronic sensors
Optoelectronic sensors
Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Wavelenght (nm) |
---|---|---|---|---|---|---|---|---|
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KPDE008S-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Mini Can InGaAs PD Pigtail |
Characteristics
Mini can pigtail
|
Typical Dark Current
30pA @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
80
|
Typology
InGaAs Photodiodes
|
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KPDE020 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
50pA @ 5V
|
Package
Hermetic sealed, Pigtail
|
Sensitive Area (µmɸ)
200
|
Typology
InGaAs Photodiodes
|
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|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
200
|
Typology
InGaAs Photodiodes
|
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|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Package
Mini can
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
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|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Wavelenght (nm)
900 - 1700
|
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KPDE030SA-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Mini can pigtail
|
Typical Dark Current
600pA (max) @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
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|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, |
Characteristics
APD
|
Typical Dark Current
10nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
55
|
Typology
InGaAs Avalanche Photodiodes
|
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|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, InGaAs Avalanche Photodiodes |
Characteristics
APD
|
Typical Dark Current
15nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
75
|
Typology
InGaAs Avalanche Photodiodes
|
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|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Typology
InGaAs Photodiodes
|
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|
KPDF030F22-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
1.2 @ 1950
|
Sensitive Wavelenght (nm)
1200 - 2300
|