Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Colour | Resin colour | External Diameter | Light intensity (mcd) | Max Direct Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED372UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Chip Material
InGaN
|
Half Angle (deg)
12
|
Wavelength (nm)
373
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.5
|
Typology
Ultra Violet LEDs
|
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|
|
KED372UHB Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Chip Material
InGaN
|
Half Angle (deg)
12
|
Wavelength (nm)
378
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
7.2
|
Typology
Ultra Violet LEDs
|
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|
KED373UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Chip Material
InGaN
|
Half Angle (deg)
100
|
Wavelength (nm)
373
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.5
|
Typology
Ultra Violet LEDs
|
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|
KED378UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN Ultraviolet LED |
Chip Material
InGaN
|
Half Angle (deg)
10
|
Wavelength (nm)
373
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1
|
Typology
Ultra Violet LEDs
|
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|
KED530HDB Multi-wavelenght LED |
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
660
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
4
|
Typology
Multi Wavelenght LEDs
|
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|
KED591M31A Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Yellow color, Kyosemi Photodevices for sensors |
Chip Material
AIGaInP
|
Half Angle (deg)
44
|
Wavelength (nm)
590
|
Package
M31
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.2
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Yellow
|
Resin colour
Clear
|
External Diameter
⌀3
|
Light intensity (mcd)
1800
|
Max Direct Voltage (V)
2.5
|
|
KED591M32A Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Yellow color, Kyosemi Photodevices for sensors |
Chip Material
AIGaInP
|
Half Angle (deg)
60
|
Wavelength (nm)
590
|
Package
M32
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.4
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Yellow
|
Resin colour
Clear
|
External Diameter
⌀3
|
Light intensity (mcd)
1000
|
Max Direct Voltage (V)
2.5
|
|
KED591M51A Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Yellow color, Kyosemi Photodevices for sensors |
Chip Material
AIGaInP
|
Half Angle (deg)
36
|
Wavelength (nm)
590
|
Package
M51
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.4
|
Typology
Plastic Mold LEDs for Sensors
|
Colour
Yellow
|
Resin colour
Clear
|
External Diameter
⌀5
|
Light intensity (mcd)
2300
|
Max Direct Voltage (V)
2.5
|
|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
14
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
Typology
Infrared LEDs
|
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KED602K Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
890
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
15
|
Typology
Infrared LEDs
|