LED
LED
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
125
|
Wavelength (nm)
850
|
Package
TO-46, epoxy lens
|
Output Power @lf(mA)
50
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
|
KED050HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
7.5
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.4
|
Typology
Parallel Beam LEds
|
|
KED050HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
6
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
|
KED109Z-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Chip Material
GaAIAs
|
Half Angle (deg)
18
|
Wavelength (nm)
890
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Chip Material
AIGaInP
|
Half Angle (deg)
115
|
Wavelength (nm)
650
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
|
KED308HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
12
|
Typology
Parallel Beam LEds
|
|
KED308HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
8
|
Wavelength (nm)
870
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
7
|
Typology
Parallel Beam LEds
|
|
KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
Typology
Infrared LEDs
|
|
KED351RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
10
|
Wavelength (nm)
660
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.8
|
Typology
Red LEDs
|