Optoelectronic sensors

Optoelectronic sensors

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Product	Description	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Typology	Amplification factor	Responsivity (mA/W) @λ(nm)	Sensitive Area (µmɸ)	Characteristics	Typical Dark Current	Sensitive Wavelenght (nm)
Discontinued Add to comparison	KPD1201C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 145	Package ϕ3 ceramic, epoxy lens	Peak sens. wavelenght (nm) 880	Sensitive Area (mm) 0.92 x 0.92	Short circuit current (µA) 12	Typology Silicon Photodiodes
Discontinued Add to comparison	KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 140	Package Surface mount	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 15	Typology Silicon Photodiodes
Discontinued Add to comparison	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package ϕ 6,5 ceramic, epoxy lens	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70	Typology Silicon Photodiodes
Discontinued Add to comparison	KPDA020-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670			Typology Silicon Avalanche Photodiodes	Amplification factor 150	Responsivity (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 200
Discontinued Add to comparison	KPDA050-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670			Typology Silicon Avalanche Photodiodes	Amplification factor 150	Responsivity (mA/W) @λ(nm) 350 @ 800	Sensitive Area (µmɸ) 500
Discontinued Add to comparison	KPDA100-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes		Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 670			Typology Silicon Avalanche Photodiodes	Amplification factor 150	Responsivity (mA/W) @λ(nm) 350 @ 660	Sensitive Area (µmɸ) 1000
Discontinued Add to comparison	KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode		Package Chip				Typology InGaAs Photodiodes			Sensitive Area (µmɸ) 50	Characteristics Array	Typical Dark Current 30pA @ 5V
Discontinued Add to comparison	KPDE030 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail				Typology InGaAs NIR Photodiodes		Responsivity (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 300			Sensitive Wavelenght (nm) 900 - 1700
Discontinued Add to comparison	KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode		Package Hermetic sealed				Typology InGaAs Photodiodes			Sensitive Area (µmɸ) 300	Characteristics L-band	Typical Dark Current 100pA @ 5V
Discontinued Add to comparison	KPDE086S Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi		Package Hermetic sealed, Pigtail				Typology InGaAs NIR Photodiodes		Responsivity (mA/W) @λ(nm) 1.0 @ 1550	Sensitive Area (µmɸ) 860x860			Sensitive Wavelenght (nm) 900 - 1700