Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Chip Material | Wavelength (nm) | Output Power @lf(mA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSxxxL-3SVT Nitride Semiconductor - LED UV |
Dimension
3.5 x 3.5 x 2.8
|
Half Angle (deg)
45
|
Wavelength
380-390 nm
390-400 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
1100
1050
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.6
3.5
|
Typology
Ultra Violet LEDs
|
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|
NSxxxL-6D4G Nitride Semiconductor - Deep UV LED |
Dimension
6.3 x 6.3 x 1.8
|
Half Angle (deg)
116
|
Wavelength
270-280 nm
305-315 nm
|
Package
Surface mount
|
Output Power (mW)
13.0
6.8
|
Operating temperature
-30 ~ +60 °C
|
Typical Direct Voltage (V)
6.5
5.5
|
Typology
Ultra Violet LEDs
|
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|
NSxxxL-7SMG Nitride Semiconductor - UV LED |
Dimension
6.8 x 6.8 x 1.0
|
Half Angle (deg)
115
|
Wavelength
360-370 nm
380-390 nm
400-410 nm
390-400 nm
|
Package
Surface mount
|
Output Power (mW)
3800
3500
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
4.0
3.5
|
Typology
Ultra Violet LEDs
|
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|
KED050CXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Half Angle (deg)
115
|
Package
TO-46, hermetic seal
|
Output Power (mW)
2.4
|
Typology
Point Source LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
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|
KED050CXK Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Half Angle (deg)
125
|
Package
TO-46, epoxy lens
|
Output Power (mW)
5
|
Typology
Point Source LEDs
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
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|
KED050HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Half Angle (deg)
7.5
|
Package
TO-46, hermetic seal
|
Output Power (mW)
2.4
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
||||
|
KED050HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Half Angle (deg)
6
|
Package
TO-46, hermetic seal
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Output Power @lf(mA)
50
|
||||
|
KED080RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Half Angle (deg)
115
|
Package
TO-46, hermetic seal
|
Output Power (mW)
0.6
|
Typology
Point Source LEDs
|
Chip Material
AIGaInP
|
Wavelength (nm)
650
|
Output Power @lf(mA)
20
|
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|
KED109Z-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Half Angle (deg)
18
|
Package
TO-46, hermetic seal
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
Chip Material
GaAIAs
|
Wavelength (nm)
890
|
Output Power @lf(mA)
20
|
||||
|
KED160RAXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED |
Half Angle (deg)
115
|
Package
TO-46, hermetic seal
|
Output Power (mW)
0.8
|
Typology
Point Source LEDs
|
Chip Material
AIGaInP
|
Wavelength (nm)
650
|
Output Power @lf(mA)
20
|