LED
LED
| Product | Description | Chip Material | Colour | Resin colour | External Diameter | Half Angle (deg) | Light intensity (mcd) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Max Direct Voltage (V) | Typology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KED661M51 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Red color, Kyosemi Photodevices for sensors |
Chip Material
GaAIAs
|
Colour
Red
|
Resin colour
Clear
|
External Diameter
⌀5
|
Half Angle (deg)
20
|
Light intensity (mcd)
1000
|
Wavelength (nm)
660
|
Package
M51
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
Max Direct Voltage (V)
2.3
|
Typology
Plastic Mold LEDs for Sensors
|
|
KED671M34 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Red color, Kyosemi Photodevices for sensors |
Chip Material
GaAIAs
|
Colour
Red
|
Resin colour
Clear
|
External Diameter
⌀3
|
Half Angle (deg)
90
|
Light intensity (mcd)
50
|
Wavelength (nm)
675
|
Package
M34
|
Output Power @lf(mA)
20
|
Output Power (mW)
5.1
|
Max Direct Voltage (V)
2.3
|
Typology
Plastic Mold LEDs for Sensors
|
|
KEDE1304H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1300
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
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|
KEDE1452H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.8
|
Typology
Infrared LEDs
|
|||||
|
KEDE1454H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
80
|
Wavelength (nm)
1450
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.5
|
Typology
Infrared LEDs
|
|||||
|
KEDE1552H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1550
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
1.8
|
Typology
Infrared LEDs
|
|||||
|
KEDE1652H Kyosemi, Photodevices for Sensors - Emitters, InGaAsP Infrared LED |
Chip Material
InGaAsP
|
Half Angle (deg)
20
|
Wavelength (nm)
1650
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
2
|
Typology
Infrared LEDs
|
|||||
|
Discontinued
|
KED080DXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
110
|
Wavelength (nm)
850
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.0
|
Typology
Point Source LEDs
|
|||||
|
Discontinued
|
KED085-P01 Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
130
|
Wavelength (nm)
850
|
Package
Surface mount
|
Output Power @lf(mA)
1000
|
Typology
Infrared LEDs
|
||||||
|
Discontinued
|
KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
145
|
Wavelength (nm)
870
|
Package
ϕ3 ceramic, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|