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KPDE086S-H85P

KPDE086S-H85P
KPDE086S-H85P
Product code
KPDE086S-H85P
Manufacturer
Kyosemi Corporation
Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi

Features:

  • 860µm sq. large sensitive area
  • Low dark current, High shubt resistance
  • Electrically cooled with TEC and thermistor
  • Small size (TO-46 package)

Applications:

  • Near IR sensors
  • Near NIR spectroscopy
  • Power meter
Package
TO-46, hermetic seal, TE cooler
Peak sens. wavelenght (nm)
1600
Responsivity (mA/W) @λ(nm)
1000 @ 1550
Sensitive Area (mm)
0.86 x 0.86
Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
Scheda tecnica259.1 KB
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