Optoelectronic sensors
Optoelectronic sensors
Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Amplification factor | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Characteristics | Typical Dark Current |
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KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
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Package
TO-18, epoxy lens
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Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
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Short circuit current (µA)
24
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Typology
Silicon Photodiodes
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KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Typology
Silicon Photodiodes
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KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|
Typology
Silicon Photodiodes
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KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
200
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KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Responsivity (mA/W) @λ(nm)
450 @ 850
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Sensitive Area (µmɸ)
500
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KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
1000
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KPDE004 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Low Dark Current High Speed Photodiode |
Package
Hermetic sealed, Pigtail
|
Typology
InGaAs Photodiodes
|
Sensitive Area (µmɸ)
45
|
Characteristics
High speed
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Typical Dark Current
20pA @ 5V
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KPDE006 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Low Dark Current High Speed Photodiode |
Package
Hermetic sealed, Pigtail
|
Typology
InGaAs Photodiodes
|
Sensitive Area (µmɸ)
60
|
Characteristics
High speed
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Typical Dark Current
30pA @ 2V
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KPDE008 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Low Dark Current High Speed Photodiode |
Package
Hermetic sealed, Pigtail
|
Typology
InGaAs Photodiodes
|
Sensitive Area (µmɸ)
80
|
Characteristics
High speed
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Typical Dark Current
30pA @ 5V
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KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Sensitive Area (µmɸ)
80
|
Characteristics
Mini can
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Typical Dark Current
160pA (max) @ 5V
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