Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED308HQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
12
|
Typology
Parallel Beam LEds
|
|
KED308HV Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Parallel Beam Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
8
|
Wavelength (nm)
870
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
50
|
Output Power (mW)
7
|
Typology
Parallel Beam LEds
|
|
KED351HDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
12
|
Wavelength (nm)
870
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
4
|
Typology
Infrared LEDs
|
|
KED351RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
10
|
Wavelength (nm)
660
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.8
|
Typology
Red LEDs
|
|
KED351RKD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
32
|
Wavelength (nm)
660
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
3.6
|
Typology
Red LEDs
|
|
KED353KDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
42
|
Wavelength (nm)
870
|
Package
TO-18, epoxy lens
|
Output Power @lf(mA)
20
|
Output Power (mW)
6
|
Typology
Infrared LEDs
|
|
KED354RHD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
45
|
Wavelength (nm)
660
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Red LEDs
|
|
KED358HQ-N Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs High Power Infrare LED |
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
890
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Typology
Parallel Beam LEds
|
|
KED358RHDQ Kyosemi, Photodevices for Sensors - Emitters, Parallel Beam LED, GaAIAs Red LED |
Chip Material
GaAIAs
|
Half Angle (deg)
11
|
Wavelength (nm)
660
|
Package
TO-46, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
2
|
Typology
Parallel Beam LEds
|
|
KED365UH Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led |
Chip Material
GaN
|
Half Angle (deg)
16
|
Wavelength (nm)
367
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
20
|
Output Power (mW)
0.7
|
Typology
Ultra Violet LEDs
|