Optoelectronic sensors
Optoelectronic sensors
Product | Description | Dust Proof | Gap | Mounting | Output | Series | Output Mode | Output type | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Half Angle (deg) |
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KP1662 Modello KP1662 è un sensore prism type photo sensor con un LED rosso Infra e un Photo transistor. |
Dust Proof
Yes
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Gap
30mm
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Mounting
Snap-in & Connector
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Output
Analog output
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Series
KP Series
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KP1663 Model KP1663 is a prism type photo sensor consisted of an Infra Red LED and a Photo transistor. |
Dust Proof
Yes
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Gap
30mm
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Mounting
Snap-in & Connector
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Output
Analog output
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Series
KP Series
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KP1850 Model KP1850 is a prism type photo sensor consisted of an Infra Red LED and a Light modulation type of Photo IC, and has one piece seamless plastic housing. |
Dust Proof
Yes
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Gap
100mm
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Mounting
Connector
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Output
Light modulation type
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Series
KP Series
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Output Mode
Livello logico alto
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Output type
Pull-up
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KP3250 Model KP3250 is a prism type photo sensor consisted of an Infra Red LED and a Photo transistor. |
Dust Proof
Yes
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Gap
30mm
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Mounting
Connector
|
Output
Analog output
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Series
KP Series
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Output Mode
Livello logico alto
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Output type
Pull-up
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KPD31S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
Surface mount
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Peak sens. wavelenght (nm)
950
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Sensitive Area (mm)
2.80 x 0.80
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Short circuit current (µA)
22
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Typology
Silicon Photodiodes
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KPD3212 Photodevices for Sensors - Detectors, Silicon Photodiode Array & Position sensing detector (PSD), Kyosemi |
Package
Surface mount
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Peak sens. wavelenght (nm)
950
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Sensitive Area (mm)
1.5 x 1.0 (per 1ch)
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Typology
Silicon Photodiode Array & Position sensing detector (PSD)
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Responsivity (mA/W) @λ(nm)
16(µA) @ 1000 lx
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KPDE086S-H85P Photodevices for Sensors - Detectors, Thermoelectrically Cooled InGaAs-InAs Photodiodes, Kyosemi |
Package
TO-46, hermetic seal, TE cooler
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Peak sens. wavelenght (nm)
1600
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Sensitive Area (mm)
0.86 x 0.86
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Typology
Thermoelectrically Cooled InGaAs-InAs Photodiodes
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Responsivity (mA/W) @λ(nm)
1000 @ 1550
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KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
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Typology
InGaAs NIR Photodiodes
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Responsivity (mA/W) @λ(nm)
1.0 @ 1550
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Sensitive Area (µmɸ)
1500
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Sensitive Wavelenght (nm)
900 - 1700
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KPDU400F-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Package
TO-5, hermetic seal
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Peak sens. wavelenght (nm)
254
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Sensitive Area (mm)
4 x 4
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Typology
Silicon UV Sensors
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Half Angle (deg)
70
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KPDU400QW-2 Photodevices for Sensors - Detectors, Silicon UV Sensors, Kyosemi |
Package
TO-5, hermetic seal
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Peak sens. wavelenght (nm)
950
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Sensitive Area (mm)
4 x 4
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Typology
Silicon UV Sensors
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Half Angle (deg)
70
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